All MOSFET. DMT6009LPS-13 Datasheet

 

DMT6009LPS-13 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMT6009LPS-13
   Marking Code: T6009LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 87 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33.5 nC
   trⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 438 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: POWERDI5060-8

 DMT6009LPS-13 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMT6009LPS-13 Datasheet (PDF)

 ..1. Size:638K  1
 dmt6009lps-13.pdf

DMT6009LPS-13 DMT6009LPS-13

GreenDMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin

 4.1. Size:638K  diodes
 dmt6009lps.pdf

DMT6009LPS-13 DMT6009LPS-13

GreenDMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin

 6.1. Size:432K  diodes
 dmt6009lfg.pdf

DMT6009LPS-13 DMT6009LPS-13

DMT6009LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TC = +25C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 10m @ VGS = 10V 34A 60V Small Form Factor Thermally Efficient Package Enables Higher 1

 6.2. Size:585K  diodes
 dmt6009lct.pdf

DMT6009LPS-13 DMT6009LPS-13

DMT6009LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Excellent QGD X RDS(ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC-DC Converts 12m @VGS = 10V 37.2A Low Input/Output Leakage 60V 14.5m @VGS = 4.5V 33.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gree

 6.3. Size:474K  diodes
 dmt6009lss.pdf

DMT6009LPS-13 DMT6009LPS-13

DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID max BVDSS RDS(ON) max TA = +25C High Conversion Efficiency Low RDS(ON) Ensures On State Losses Are Minimized 9.5m @ VGS = 10V 10.8A 60V Excellent Qgd x RDS(ON) Product (FOM) 12m @ VGS = 4.5V 9.6

 6.4. Size:261K  inchange semiconductor
 dmt6009lct.pdf

DMT6009LPS-13 DMT6009LPS-13

isc N-Channel MOSFET Transistor DMT6009LCTFEATURESDrain Current I = 37.2A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APQ4ESN50AE

 

 
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