DMTH8003SPS-13 MOSFET Datasheet: N-Ch, 80V, 100A. Full specification with pinout and replacement list

DMTH8003SPS-13 Specs and Replacement

Type Designator: DMTH8003SPS-13

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.4 nS

Cossⓘ - Output Capacitance: 533 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: POWERDI5060-8

DMTH8003SPS-13 substitution

- MOSFET ⓘ Cross-Reference Search

DMTH8003SPS-13 datasheet

..1. Size:499K 1
dmth8003sps-13.pdf pdf_icon

DMTH8003SPS Green 80V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Test in Production 3.9m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 80V... See More ⇒

3.1. Size:499K diodes
dmth8003sps.pdf pdf_icon

8.1. Size:519K 1
dmth8012lpsw-13.pdf pdf_icon

Green DMTH8012LPSW 80V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli... See More ⇒

8.2. Size:550K diodes
dmth8012lk3.pdf pdf_icon