FDP047N10 MOSFET Datasheet: N-Ch, 100V, 164A. Full specification with pinout and replacement list

FDP047N10 Specs and Replacement

Type Designator: FDP047N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 164 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: TO220

FDP047N10 substitution

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FDP047N10 datasheet

..1. Size:536K fairchild semi
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August 2008 FDP047N10 tm N-Channel PowerTrench MOSFET 100V, 164A, 4.7m Description General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon- ductor s advance PowerTrench process that has been especially Fast switching speed tailored to minimize the on-state resistance and yet maintain superior switch... See More ⇒

..2. Size:908K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

..3. Size:283K inchange semiconductor
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7.1. Size:526K fairchild semi
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March 2008 FDP047N08 tm N-Channel PowerTrench MOSFET 75V, 164A, 4.7m Features Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain super... See More ⇒