All MOSFET. FDP047N10 Datasheet

 

FDP047N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDP047N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 164 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 210 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: TO220

 FDP047N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP047N10 Datasheet (PDF)

 ..1. Size:536K  fairchild semi
 fdp047n10.pdf

FDP047N10 FDP047N10

August 2008FDP047N10tmN-Channel PowerTrench MOSFET 100V, 164A, 4.7mDescription General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advance PowerTrench process that has been especially Fast switching speedtailored to minimize the on-state resistance and yet maintain superior switch

 ..2. Size:908K  onsemi
 fdp047n10.pdf

FDP047N10 FDP047N10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:283K  inchange semiconductor
 fdp047n10.pdf

FDP047N10 FDP047N10

isc N-Channel MOSFET Transistor FDP047N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 4.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 7.1. Size:526K  fairchild semi
 fdp047n08.pdf

FDP047N10 FDP047N10

March 2008FDP047N08tmN-Channel PowerTrench MOSFET 75V, 164A, 4.7mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain super

 7.2. Size:698K  onsemi
 fdp047n08.pdf

FDP047N10 FDP047N10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.3. Size:284K  inchange semiconductor
 fdp047n08.pdf

FDP047N10 FDP047N10

isc N-Channel MOSFET Transistor FDP047N08FEATURESWith TO-220 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 4.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 , STM4637 , FDP047N08 , IRFP064N , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , FDP075N15AF102 , FDP083N15AF102 , FDP085N10AF102 .

 

 
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