All MOSFET. FDP050AN06A0 Datasheet

 

FDP050AN06A0 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDP050AN06A0

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 245 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 61 nC

Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm

Package: TO220

FDP050AN06A0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP050AN06A0 Datasheet (PDF)

0.1. fdb050an06a0 fdp050an06a0.pdf Size:564K _fairchild_semi

FDP050AN06A0
FDP050AN06A0

February 2003FDB050AN06A0 / FDP050AN06A0N-Channel PowerTrench MOSFET60V, 80A, 5mFeatures Applications rDS(ON) = 4.3m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 61nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pul

9.1. fdp053n08b.pdf Size:1440K _fairchild_semi

FDP050AN06A0
FDP050AN06A0

June 2014FDP053N08BN-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mFeatures Description RDS(on) = 4.2 m (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintaining superior switching performance.

9.2. fdp054n10.pdf Size:269K _fairchild_semi

FDP050AN06A0
FDP050AN06A0

August 2010FDP054N10N-Channel PowerTrench MOSFET 100V, 144A, 5.5mFeatures Description RDS(on) = 4.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 9.3. fdp053n08b.pdf Size:207K _inchange_semiconductor

FDP050AN06A0
FDP050AN06A0

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDP053N08BFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIM

9.4. fdp054n10.pdf Size:283K _inchange_semiconductor

FDP050AN06A0
FDP050AN06A0

isc N-Channel MOSFET Transistor FDP054N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 5.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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