IPLK60R1K5PFD7 Specs and Replacement

Type Designator: IPLK60R1K5PFD7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: THINPAK5X6

IPLK60R1K5PFD7 substitution

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IPLK60R1K5PFD7 datasheet

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IPLK60R1K5PFD7

IPLK60R1K5PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada... See More ⇒

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IPLK60R1K5PFD7

IPLK60R1K0PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada... See More ⇒

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 iplk60r360pfd7.pdf pdf_icon

IPLK60R1K5PFD7

IPLK60R360PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada... See More ⇒

 7.2. Size:1373K  1
 iplk60r600pfd7.pdf pdf_icon

IPLK60R1K5PFD7

IPLK60R600PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada... See More ⇒

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Detailed specifications: HYG019N04NR1C2, HYG023N03LR1C2, HYG025N04NA1C2, HYG045N03LA1C1, HYG055N08NS1C2, HYG072N10LS1C2, HYG110P04LQ2C2, IPLK60R1K0PFD7, 7N60, IPLK60R360PFD7, IPLK60R600PFD7, IRFH3707TRPBF, IRFH5006TRPBF, IRFH5010TRPBF, IRFH5020TRPBF, IRFH5300TRPBF, IRFH5301TRPBF

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