All MOSFET. IPLK60R360PFD7 Datasheet

 

IPLK60R360PFD7 Datasheet and Replacement


   Type Designator: IPLK60R360PFD7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: THINPAK5X6
 

 IPLK60R360PFD7 substitution

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IPLK60R360PFD7 Datasheet (PDF)

 ..1. Size:1378K  1
iplk60r360pfd7.pdf pdf_icon

IPLK60R360PFD7

IPLK60R360PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

 7.1. Size:1373K  1
iplk60r1k0pfd7.pdf pdf_icon

IPLK60R360PFD7

IPLK60R1K0PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

 7.2. Size:1371K  1
iplk60r1k5pfd7.pdf pdf_icon

IPLK60R360PFD7

IPLK60R1K5PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

 7.3. Size:1373K  1
iplk60r600pfd7.pdf pdf_icon

IPLK60R360PFD7

IPLK60R600PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

Datasheet: HYG023N03LR1C2 , HYG025N04NA1C2 , HYG045N03LA1C1 , HYG055N08NS1C2 , HYG072N10LS1C2 , HYG110P04LQ2C2 , IPLK60R1K0PFD7 , IPLK60R1K5PFD7 , RU7088R , IPLK60R600PFD7 , IRFH3707TRPBF , IRFH5006TRPBF , IRFH5010TRPBF , IRFH5020TRPBF , IRFH5300TRPBF , IRFH5301TRPBF , IRFH5302TRPBF .

History: SSD40P04-20D | SI5482DU

Keywords - IPLK60R360PFD7 MOSFET datasheet

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