IRFH5020TRPBF Specs and Replacement

Type Designator: IRFH5020TRPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.7 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: PQFN5X6

IRFH5020TRPBF substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFH5020TRPBF datasheet

 ..1. Size:260K  1
irfh5020trpbf.pdf pdf_icon

IRFH5020TRPBF

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The... See More ⇒

 6.1. Size:341K  international rectifier
irfh5020pbf.pdf pdf_icon

IRFH5020TRPBF

PD -97428 IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 43 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses ... See More ⇒

 7.1. Size:272K  international rectifier
irfh5025pbf.pdf pdf_icon

IRFH5020TRPBF

IRFH5025PbF HEXFET Power MOSFET VDS 250 V RDS(on) max 100 m (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.6 ID 25 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low Th... See More ⇒

 8.1. Size:263K  1
irfh5006trpbf.pdf pdf_icon

IRFH5020TRPBF

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses ... See More ⇒

Detailed specifications: HYG110P04LQ2C2, IPLK60R1K0PFD7, IPLK60R1K5PFD7, IPLK60R360PFD7, IPLK60R600PFD7, IRFH3707TRPBF, IRFH5006TRPBF, IRFH5010TRPBF, IRFB7545, IRFH5300TRPBF, IRFH5301TRPBF, IRFH5302TRPBF, IRFH7004TRPBF, IRFH7085TRPBF, IRFH7440TRPBF, IRFH7446TRPBF, IRFH7914TRPBF

Keywords - IRFH5020TRPBF MOSFET specs

 IRFH5020TRPBF cross reference

 IRFH5020TRPBF equivalent finder

 IRFH5020TRPBF pdf lookup

 IRFH5020TRPBF substitution

 IRFH5020TRPBF replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.