IRFH7004TRPBF MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFH7004TRPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 259 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 129 nC
   trⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 952 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PQFN5X6

IRFH7004TRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFH7004TRPBF Datasheet (PDF)

..1. Size:268K 1
irfh7004trpbf.pdf

StrongIRFETIRFH7004PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40Vl BLDC Motor drive applicationsRDS(on) typ. 1.1ml Battery powered circuitsl Half-bridge and full-bridge topologies max. 1.4ml Synchronous rectifier applicationsID (Silicon Limited) 259Al Resonant mode power suppliesID (Package Limited) 100A l OR-ing and redundant p

6.1. Size:268K international rectifier
irfh7004.pdf

6.2. Size:268K infineon
irfh7004pbf.pdf

8.1. Size:502K 1
irfh7085trpbf.pdf

StrongIRFET IRFH7085PbF HEXFET Power MOSFET Application VDSS 60V Half-bridge and full-bridge topologies Synchronous rectifier applications RDS(on) typ. 2.6m Resonant mode power supplies DC/DC converters max 3.2m DC/AC Inverters ID (Silicon Limited) 147A ID (Package Limited) 100A Benefits Improved Gate, A

8.2. Size:706K international rectifier
irfh7084.pdf

StrongIRFET IRFH7084PbF Application HEXFET Power MOSFET Half-bridge and full-bridge topologies Synchronous rectifier applications VDSS 40V Resonant mode power supplies DC/DC converters RDS(on) typ. 0.95m DC/AC Inverters 1.25mmax ID (Silicon Limited) 265A ID (Package Limited) 100A Benefits Improved Ga

8.3. Size:500K international rectifier
irfh7085.pdf