All MOSFET. 2SK2737 Datasheet

 

2SK2737 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2737

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1550 pF

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: TO220F

2SK2737 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2737 Datasheet (PDF)

1.1. 2sk2737.pdf Size:89K _renesas

2SK2737
2SK2737

2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 (Previous: ADE-208-533B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 10 m? typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 6

4.1. 2sk2730.pdf Size:210K _update

2SK2737
2SK2737

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk2733.pdf Size:413K _toshiba

2SK2737
2SK2737

2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2733 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 8.0 ? (typ.) (ON) High forward transfer admittance : |Y | = 0.9 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

4.3. 2sk2735.pdf Size:90K _renesas

2SK2737
2SK2737

2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1029-0200 (Previous: ADE-208-543) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 20 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(L)-(2)) (Packa

4.4. rej03g1029 2sk2735lsds.pdf Size:103K _renesas

2SK2737
2SK2737

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.5. 2sk2736.pdf Size:88K _renesas

2SK2737
2SK2737

2SK2736 Silicon N Channel MOS FET High Speed Power Switching REJ03G1030-0200 (Previous: ADE-208-544) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 20 m? typ. (VGS = 10 V, ID = 15 A) 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.2.00 S

4.6. 2sk2738.pdf Size:94K _renesas

2SK2737
2SK2737

2SK2738 Silicon N Channel MOS FET High Speed Power Switching REJ03G1032-0200 (Previous: ADE-208-483) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m? typ High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.2.00 Se

4.7. 2sk2731 1-5.pdf Size:116K _rohm

2SK2737
2SK2737

4.8. 2sk2731.pdf Size:112K _rohm

2SK2737
2SK2737

Transistors Interface and switching (30V, 200mA) 2SK2731 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit 146 Transistors 2SK2731 FElectrical characteristics (Ta = 2

4.9. 2sk2739.pdf Size:145K _rohm

2SK2737
2SK2737

Transistors Switching (300V, 16A) 2SK2739 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications

4.10. 2sk2739 1-5.pdf Size:139K _rohm

2SK2737
2SK2737

4.11. 2sk2731-3.pdf Size:1023K _kexin

2SK2737
2SK2737

SMD Type MOSFET N-Channel MOSFET 2SK2731 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 30V 1 2 ● ID = 0.2 A +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 2.8Ω (VGS = 10V) +0.1 1.9 -0.2 ● RDS(ON) < 4.5Ω (VGS = 4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Volta

4.12. 2sk2731.pdf Size:1015K _kexin

2SK2737
2SK2737

SMD Type MOSFET N-Channel MOSFET 2SK2731 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 30V 1 2 ● ID = 0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 ● RDS(ON) < 2.8Ω (VGS = 10V) ● RDS(ON) < 4.5Ω (VGS = 4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VD

Datasheet: 2SK2708 , 2SK2709 , 2SK2710 , 2SK2723 , 2SK2724 , 2SK2734 , 2SK2735 , 2SK2736 , IRF2807 , 2SK2738 , 2SK2753-01 , 2SK2778 , 2SK2779 , 2SK2788 , 2SK2796 , 2SK2800 , 2SK2802 .

 


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