JSM2622 Datasheet and Replacement
Type Designator: JSM2622
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN3333-8
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JSM2622 Datasheet (PDF)
jsm2622.pdf

JSM2622N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET DDescription The JSM2622 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) Typ =4.5m@ VGS=10V 18RDS(ON) =5.0m@ VGS=4.5V Typ
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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History: 2SK1571 | IRF7473



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