All MOSFET. MCAC50N06Y-TP Datasheet

 

MCAC50N06Y-TP Datasheet and Replacement


   Type Designator: MCAC50N06Y-TP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 691 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: DFN5060
 

 MCAC50N06Y-TP substitution

   - MOSFET ⓘ Cross-Reference Search

 

MCAC50N06Y-TP Datasheet (PDF)

 ..1. Size:899K  1
 mcac50n06y-tp.pdf pdf_icon

MCAC50N06Y-TP

MCAC50N06YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 60 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=48V, VGS=0V, TJ=25CZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshol

 4.1. Size:899K  mcc
 mcac50n06y.pdf pdf_icon

MCAC50N06Y-TP

MCAC50N06YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 60 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=48V, VGS=0V, TJ=25CZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshol

 7.1. Size:677K  1
 mcac50n10y-tp.pdf pdf_icon

MCAC50N06Y-TP

MCAC50N10YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1 2 3 VGate-Threshold

 7.2. Size:677K  mcc
 mcac50n10y.pdf pdf_icon

MCAC50N06Y-TP

MCAC50N10YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1 2 3 VGate-Threshold

SHOW MORE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - MCAC50N06Y-TP MOSFET datasheet

 MCAC50N06Y-TP cross reference
 MCAC50N06Y-TP equivalent finder
 MCAC50N06Y-TP lookup
 MCAC50N06Y-TP substitution
 MCAC50N06Y-TP replacement

 

 
Back to Top

 


 
.