NTMFS5C426NLT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFS5C426NLT1G
Marking Code: 5C426L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 128 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 237 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 44 nC
trⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 2600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
Package: DFN5
NTMFS5C426NLT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS5C426NLT1G Datasheet (PDF)
ntmfs5c426nlt1g.pdf
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ntmfs5c426nt1g.pdf
MOSFET Power, SingleN-Channel40 V, 1.3 mW, 235 ANTMFS5C426NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 1.3 mW @ 10 V 235 AMAXIMUM RATINGS (TJ = 25C unless otherw
ntmfs5c426n.pdf
MOSFET Power, SingleN-Channel40 V, 1.3 mW, 235 ANTMFS5C426NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 1.3 mW @ 10 V 235 AMAXIMUM RATINGS (TJ = 25C unless otherw
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