All MOSFET. NTMFS5C442NT3G Datasheet

 

NTMFS5C442NT3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFS5C442NT3G
   Marking Code: 5C442L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 8.3 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: DFN5

 NTMFS5C442NT3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS5C442NT3G Datasheet (PDF)

 ..1. Size:121K  1
 ntmfs5c442nt3g.pdf

NTMFS5C442NT3G NTMFS5C442NT3G

NTMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Va

 3.1. Size:71K  1
 ntmfs5c442nlt1g.pdf

NTMFS5C442NT3G NTMFS5C442NT3G

NTMFS5C442NLPower MOSFET40 V, 2.5 mW, 130 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.5 mW @ 10 V40

 3.2. Size:121K  onsemi
 ntmfs5c442n.pdf

NTMFS5C442NT3G NTMFS5C442NT3G

NTMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Va

 3.3. Size:72K  onsemi
 ntmfs5c442nl.pdf

NTMFS5C442NT3G NTMFS5C442NT3G

NTMFS5C442NLPower MOSFET40 V, 2.8 mW, 121 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 V

 3.4. Size:115K  onsemi
 ntmfs5c442nlt.pdf

NTMFS5C442NT3G NTMFS5C442NT3G

NTMFS5C442NLTPower MOSFET40 V, 2.8 mW, 127 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com NTMFS5C442NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com

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