NTMFS5C450NT3G MOSFET. Datasheet pdf. Equivalent

   Type Designator: NTMFS5C450NT3G
   Marking Code: 5C450N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 102 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 830 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: DFN5

NTMFS5C450NT3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NTMFS5C450NT3G Datasheet (PDF)

..1. Size:169K 1
ntmfs5c450nt3g.pdf

NTMFS5C450NMOSFET Power, Single,N-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 3.3 mW @ 10 V 102 AMAXIMUM RATINGS (TJ = 25C unless other

3.1. Size:122K 1
ntmfs5c450nlt3g.pdf

NTMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 VPar

3.2. Size:122K onsemi
ntmfs5c450nl.pdf