NTMFS5C609NLT1G MOSFET Datasheet: N-Ch, 60V, 250A. Full specification with pinout and replacement list

NTMFS5C609NLT1G Specs and Replacement

   Type Designator: NTMFS5C609NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 2953 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00136 Ohm
   Package: DFN5

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NTMFS5C609NLT1G datasheet

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NTMFS5C609NL Power MOSFET 60 V, 1.36 mW, 250 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.36 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C un... See More ⇒

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NTMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 1.2 mW @ 10 V 60 ... See More ⇒

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MOSFET Power, Single, N-Channel 60 V, 1.2 mW, 287 A NTMFS5C604NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.2 mW @ 10 V 60 V 287 A 1.7 mW @ 4.5 V MAXIMUM RATINGS (TJ =... See More ⇒