NTMFS5C612NT1G-TE MOSFET Datasheet: N-Ch, 60V, 230A. Full specification with pinout and replacement list

NTMFS5C612NT1G-TE Specs and Replacement

Type Designator: NTMFS5C612NT1G-TE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 230 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46.9 nS

Cossⓘ - Output Capacitance: 3180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm

Package: DFN5

NTMFS5C612NT1G-TE substitution

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NTMFS5C612NT1G-TE datasheet

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MOSFET Power, Single, N-Channel 60 V, 1.6 mW, 230 A NTMFS5C612N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 1.6 mW @ 10 V 230 A MAXIMUM RATINGS (TJ = 25 C unless otherw... See More ⇒

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NTMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl... See More ⇒

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