NTMFS5C628NLT1G PDF and Equivalents Search

 

NTMFS5C628NLT1G Specs and Replacement

Type Designator: NTMFS5C628NLT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: DFN5

NTMFS5C628NLT1G substitution

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NTMFS5C628NLT1G datasheet

 0.1. Size:91K  1
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NTMFS5C628NLT1G

NTMFS5C628NL Power MOSFET 60 V, 2.4 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.4 mW @ 10 V 60 ... See More ⇒

 2.1. Size:91K  onsemi
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NTMFS5C628NLT1G

NTMFS5C628NL Power MOSFET 60 V, 2.4 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.4 mW @ 10 V 60 ... See More ⇒

 3.1. Size:203K  1
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NTMFS5C628NLT1G

NTMFS5C628N MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 3.0 mW @ 10 V 150 A MAXIMUM RATINGS (TJ = 25 C unless otherwis... See More ⇒

 3.2. Size:203K  onsemi
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NTMFS5C628NLT1G

NTMFS5C628N MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 3.0 mW @ 10 V 150 A MAXIMUM RATINGS (TJ = 25 C unless otherwis... See More ⇒

Detailed specifications: NTMFS5C456NLT3G, NTMFS5C460NLT3G, NTMFS5C468NLT1G, NTMFS5C604NLT1G, NTMFS5C604NLT3G, NTMFS5C609NLT1G, NTMFS5C612NLT1G, NTMFS5C612NT1G-TE, AO4407A, NTMFS5C628NT1G, NTMFS5C645NLT1G, NTMFS5C645NLT3G, NTMFS5C646NLT1G, NTMFS5C646NLT3G, NTMFS5C670NLT3G, NTMFS5C670NT1G, NTMFS5C673NLT1G

Keywords - NTMFS5C628NLT1G MOSFET specs

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