NTMFS5C628NT1G MOSFET. Datasheet pdf. Equivalent

   Type Designator: NTMFS5C628NT1G
   Marking Code: 5C628N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 1680 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: DFN5

NTMFS5C628NT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NTMFS5C628NT1G Datasheet (PDF)

..1. Size:203K 1
ntmfs5c628nt1g.pdf

NTMFS5C628NMOSFET - Power, SingleN-Channel60 V, 3.0 mW, 150 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX60 V 3.0 mW @ 10 V 150 AMAXIMUM RATINGS (TJ = 25C unless otherwis

3.1. Size:91K 1
ntmfs5c628nlt1g.pdf

NTMFS5C628NLPower MOSFET60 V, 2.4 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.4 mW @ 10 V60

3.2. Size:91K onsemi
ntmfs5c628nl.pdf