All MOSFET. NTMFS5C670NT1G Datasheet

 

NTMFS5C670NT1G Datasheet and Replacement


   Type Designator: NTMFS5C670NT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 71 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5
 

 NTMFS5C670NT1G substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTMFS5C670NT1G Datasheet (PDF)

 ..1. Size:228K  1
 ntmfs5c670nt1g.pdf pdf_icon

NTMFS5C670NT1G

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis

 3.1. Size:79K  1
 ntmfs5c670nlt3g.pdf pdf_icon

NTMFS5C670NT1G

NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V

 3.2. Size:228K  onsemi
 ntmfs5c670n.pdf pdf_icon

NTMFS5C670NT1G

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis

 3.3. Size:114K  onsemi
 ntmfs5c670nl.pdf pdf_icon

NTMFS5C670NT1G

NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V

SHOW MORE

Datasheet: NTMFS5C612NT1G-TE , NTMFS5C628NLT1G , NTMFS5C628NT1G , NTMFS5C645NLT1G , NTMFS5C645NLT3G , NTMFS5C646NLT1G , NTMFS5C646NLT3G , NTMFS5C670NLT3G , IRF740 , NTMFS5C673NLT1G , NTMFS5C673NT1G , NTMFS5H425NLT1G , NTMFS6B05NT1G , NTMFS6B05NT3G , NTMFS6B14NT3G , NTMFS6H801NT1G , NTMFS6H818NLT1G .

History: NCEP01T18 | RU8205G

Keywords - NTMFS5C670NT1G MOSFET datasheet

 NTMFS5C670NT1G cross reference
 NTMFS5C670NT1G equivalent finder
 NTMFS5C670NT1G lookup
 NTMFS5C670NT1G substitution
 NTMFS5C670NT1G replacement

 

 
Back to Top

 


 
.