NTMFS6B05NT3G PDF and Equivalents Search

 

NTMFS6B05NT3G Specs and Replacement

Type Designator: NTMFS6B05NT3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 104 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 570 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DFN5

NTMFS6B05NT3G substitution

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NTMFS6B05NT3G datasheet

 ..1. Size:171K  1
 ntmfs6b05nt3g.pdf pdf_icon

NTMFS6B05NT3G

NTMFS6B05N MOSFET Power, Single, N-Channel 100 V, 8 mW, 104 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 100 V 8 mW @ 10 V 104 A Compliant MAXIMUM RATINGS (TJ... See More ⇒

 3.1. Size:77K  1
 ntmfs6b05nt1g.pdf pdf_icon

NTMFS6B05NT3G

NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted... See More ⇒

 4.1. Size:72K  onsemi
 ntmfs6b05n.pdf pdf_icon

NTMFS6B05NT3G

NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted... See More ⇒

 6.1. Size:72K  onsemi
 ntmfs6b03n.pdf pdf_icon

NTMFS6B05NT3G

NTMFS6B03N Power MOSFET 100 V, 4.8 mW, 132 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise not... See More ⇒

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Detailed specifications: NTMFS5C646NLT1G, NTMFS5C646NLT3G, NTMFS5C670NLT3G, NTMFS5C670NT1G, NTMFS5C673NLT1G, NTMFS5C673NT1G, NTMFS5H425NLT1G, NTMFS6B05NT1G, 50N06, NTMFS6B14NT3G, NTMFS6H801NT1G, NTMFS6H818NLT1G, NTMFS6H836NLT1G, NTMFS6H848NLT1G, NTMFS6H852NLT1G, NTTFS4C05NTAG, NTTFS4C10NTAG

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