All MOSFET. STS65R190FS2 Datasheet

 

STS65R190FS2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STS65R190FS2
   Marking Code: 65R190FS2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220F

 STS65R190FS2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STS65R190FS2 Datasheet (PDF)

 ..1. Size:553K  silan
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STS65R190FS2 STS65R190FS2

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 8.1. Size:571K  silan
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STS65R190FS2 STS65R190FS2

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 8.2. Size:495K  silan
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STS65R190FS2 STS65R190FS2

STS65R580D(F)(S)(MJ)S2 8A, 650V MOS 2STS65R580D(F)(S)(MJ)S2 N MOSFET MOS 1 13STS65R580D(F)(S)(MJ)S2

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History: MTP1N55 | IRF3305 | APT12080LVFRG | 2SK3430-Z | MTP20N10E | APT12067B2LLG

 

 
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