SVD1055SA Specs and Replacement
Type Designator: SVD1055SA
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 147 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOP8
SVD1055SA substitution
- MOSFET ⓘ Cross-Reference Search
SVD1055SA datasheet
svd1055sa.pdf
SVD1055SA 17A 55V N/P 7 8 5 6 SVD1055SA N/P MOS VDMOS 4 2 ... See More ⇒
Detailed specifications: STS65R190TS2, STS65R280DS2TR, STS65R280FS2, STS65R580DS2TR, STS65R580FS2, STS65R580MJS2, STS65R580SS2, STS65R580SS2TR, K3569, SVD3205STR, SVD540DTR, SVD540F, SVD640DTR, SVD640S, SVD640STR, SVDP2353PL3A, SVDZ24NDTR
Keywords - SVD1055SA MOSFET specs
SVD1055SA cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: STS65R580SS2TR | WMB119N12HG4
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