SVF10N65CA Datasheet and Replacement
Type Designator: SVF10N65CA
Marking Code: 10N65CA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 148 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 26.61 nC
tr ⓘ - Rise Time: 36.87 nS
Cossⓘ - Output Capacitance: 118 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO252
SVF10N65CA substitution
SVF10N65CA Datasheet (PDF)
svf10n65cfj.pdf

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand
svf10n65cf svf10n65ck svf10n65cfjh.pdf

SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.
svf10n65f svf10n65t.pdf

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
Datasheet: SVD640DTR , SVD640S , SVD640STR , SVDP2353PL3A , SVDZ24NDTR , SVF10N60CAFJ , SVF10N60CFJ , SVF10N60STR , IRLZ44N , SVF10N65CF , SVF10N65CFJH , SVF10N65CK , SVF10N65K , SVF10N65S , SVF10N65STR , SVF12N60CF , SVF12N60CFJ .
History: MS4541C | APT50M65JFLL
Keywords - SVF10N65CA MOSFET datasheet
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History: MS4541C | APT50M65JFLL



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