SVF10N65CA
MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF10N65CA
Marking Code: 10N65CA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 148
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 26.61
nC
trⓘ - Rise Time: 36.87
nS
Cossⓘ -
Output Capacitance: 118
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95
Ohm
Package:
TO252
SVF10N65CA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF10N65CA
Datasheet (PDF)
..1. Size:414K silan
svf10n65ca.pdf
SVF10N65CA 10A650V N 2SVF10N65CA N MOS F-CellTM VDMOS 13
5.1. Size:290K silan
svf10n65cfj.pdf
SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand
6.1. Size:601K 1
svf10n65f svf10n65t.pdf
SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
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