SVF10N65CF Specs and Replacement

Type Designator: SVF10N65CF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

SVF10N65CF substitution

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SVF10N65CF datasheet

 ..1. Size:361K  silan
svf10n65cf svf10n65ck svf10n65cfjh.pdf pdf_icon

SVF10N65CF

SVF10N65CF/K/FJH 10A 650V N 2 SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 1 3 1. 2.... See More ⇒

 0.1. Size:290K  silan
svf10n65cfj.pdf pdf_icon

SVF10N65CF

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand... See More ⇒

 5.1. Size:414K  silan
svf10n65ca.pdf pdf_icon

SVF10N65CF

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 6.1. Size:601K  1
svf10n65f svf10n65t.pdf pdf_icon

SVF10N65CF

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch... See More ⇒

Detailed specifications: SVD640S, SVD640STR, SVDP2353PL3A, SVDZ24NDTR, SVF10N60CAFJ, SVF10N60CFJ, SVF10N60STR, SVF10N65CA, IRF530, SVF10N65CFJH, SVF10N65CK, SVF10N65K, SVF10N65S, SVF10N65STR, SVF12N60CF, SVF12N60CFJ, SVF12N60STR

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