SVF10N65CFJH Datasheet and Replacement
Type Designator: SVF10N65CFJH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
SVF10N65CFJH substitution
SVF10N65CFJH Datasheet (PDF)
svf10n65cf svf10n65ck svf10n65cfjh.pdf

SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.
svf10n65cfj.pdf

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand
svf10n65f svf10n65t.pdf

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
Datasheet: SVD640STR , SVDP2353PL3A , SVDZ24NDTR , SVF10N60CAFJ , SVF10N60CFJ , SVF10N60STR , SVF10N65CA , SVF10N65CF , IRLB4132 , SVF10N65CK , SVF10N65K , SVF10N65S , SVF10N65STR , SVF12N60CF , SVF12N60CFJ , SVF12N60STR , SVF12N65K .
History: KDT3055L | KF7N68F | HAT2280R | CS12N65FF | AM7336N | SFF60P05Z | AOD468
Keywords - SVF10N65CFJH MOSFET datasheet
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History: KDT3055L | KF7N68F | HAT2280R | CS12N65FF | AM7336N | SFF60P05Z | AOD468



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