All MOSFET. SVF10N65CFJH Datasheet

 

SVF10N65CFJH Datasheet and Replacement


   Type Designator: SVF10N65CFJH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F
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SVF10N65CFJH Datasheet (PDF)

 ..1. Size:361K  silan
 svf10n65cf svf10n65ck svf10n65cfjh.pdf pdf_icon

SVF10N65CFJH

SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.

 3.1. Size:290K  silan
 svf10n65cfj.pdf pdf_icon

SVF10N65CFJH

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

 5.1. Size:414K  silan
 svf10n65ca.pdf pdf_icon

SVF10N65CFJH

SVF10N65CA 10A650V N 2SVF10N65CA N MOS F-CellTM VDMOS 13

 6.1. Size:601K  1
 svf10n65f svf10n65t.pdf pdf_icon

SVF10N65CFJH

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2SK3115B | BSB280N15NZ3G | 12N65KG-TF1-T | IRLHM630 | R5016ANJ | ELM13401CA | DH150N12B

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