SVF10N65CK Datasheet and Replacement
Type Designator: SVF10N65CK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO262
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SVF10N65CK Datasheet (PDF)
svf10n65cf svf10n65ck svf10n65cfjh.pdf

SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.
svf10n65cfj.pdf

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand
svf10n65f svf10n65t.pdf

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: BUZ104 | STD4NK60Z | KNB2710A | STD50N03L-1 | 2SK1314L | MMQ60R115PCTH | MMN35N03
Keywords - SVF10N65CK MOSFET datasheet
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History: BUZ104 | STD4NK60Z | KNB2710A | STD50N03L-1 | 2SK1314L | MMQ60R115PCTH | MMN35N03



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