All MOSFET. SVF10N65CK Datasheet

 

SVF10N65CK Datasheet and Replacement


   Type Designator: SVF10N65CK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO262
 

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SVF10N65CK Datasheet (PDF)

 ..1. Size:361K  silan
 svf10n65cf svf10n65ck svf10n65cfjh.pdf pdf_icon

SVF10N65CK

SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.

 5.1. Size:290K  silan
 svf10n65cfj.pdf pdf_icon

SVF10N65CK

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

 5.2. Size:414K  silan
 svf10n65ca.pdf pdf_icon

SVF10N65CK

SVF10N65CA 10A650V N 2SVF10N65CA N MOS F-CellTM VDMOS 13

 6.1. Size:601K  1
 svf10n65f svf10n65t.pdf pdf_icon

SVF10N65CK

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

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Datasheet: SVDP2353PL3A , SVDZ24NDTR , SVF10N60CAFJ , SVF10N60CFJ , SVF10N60STR , SVF10N65CA , SVF10N65CF , SVF10N65CFJH , IRFP450 , SVF10N65K , SVF10N65S , SVF10N65STR , SVF12N60CF , SVF12N60CFJ , SVF12N60STR , SVF12N65K , SVF12N65S .

History: 4N80AF

Keywords - SVF10N65CK MOSFET datasheet

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