SVF12N60CF Datasheet and Replacement
Type Designator: SVF12N60CF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 152 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220F
SVF12N60CF substitution
SVF12N60CF Datasheet (PDF)
svf12n60f svf12n60s svf12n60str svf12n60k.pdf
SVF12N60F/S/K 12A600V N 2SVF12N60F/S/K N MOS F-CellTM VDMOS 13 1. 2. 3
svf12n60t svf12n60f svf12n60s svf12n60k.pdf
SVF12N60T/F/S/K 12A600V N SVF12N60T/F/S/K N MOS F-CellTM VDMOS AC-DC
Datasheet: SVF10N60STR , SVF10N65CA , SVF10N65CF , SVF10N65CFJH , SVF10N65CK , SVF10N65K , SVF10N65S , SVF10N65STR , IRFZ24N , SVF12N60CFJ , SVF12N60STR , SVF12N65K , SVF12N65S , SVF12N65STR , SVF13N50AF , SVF13N50CFJ , SVF13N50S .
History: SVF12N60STR | RE1C001ZP
Keywords - SVF12N60CF MOSFET datasheet
SVF12N60CF cross reference
SVF12N60CF equivalent finder
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History: SVF12N60STR | RE1C001ZP
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