SVF4N60CADTR Datasheet and Replacement
Type Designator: SVF4N60CADTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO252
- MOSFET Cross-Reference Search
SVF4N60CADTR Datasheet (PDF)
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SVF4N60CAF/K/D/T/MN/MJ 4A600V N 2 SVF4N60CAF/K/D/T/MN/MJ N MOS 13 F-CellTM VDMOS 1TO-252-2L3
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SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc
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SVF4N60CAF/K/D/T/MN/MJ 4A600V N SVF4N60CAF/K/D/T/MN/MJ N MOS F-CellTM VDMOS
svf4n60cafj.pdf
SVF4N60CAFJ 4A600V N 2SVF4N60CAFJ N MOS 1 F-CellTM VDMOS 3 1. 2.
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: RS1G260MN | KCM9860A | AP3P7R0EMT | KF9N50F | AUIRF1324L | JFPC18N65CI | ME60P06T-G
Keywords - SVF4N60CADTR MOSFET datasheet
SVF4N60CADTR cross reference
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History: RS1G260MN | KCM9860A | AP3P7R0EMT | KF9N50F | AUIRF1324L | JFPC18N65CI | ME60P06T-G
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