SVF4N60DTR Datasheet. Specs and Replacement

Type Designator: SVF4N60DTR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO252

SVF4N60DTR substitution

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SVF4N60DTR datasheet

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SVF4N60DTR

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc... See More ⇒

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Detailed specifications: SVF3878AP7, SVF3878P7, SVF3N65VFJ, SVF4N150F, SVF4N150P7, SVF4N150PF, SVF4N60CADTR, SVF4N60CAFJ, IRFZ46N, SVF4N65CADTR, SVF4N65CAFJH, SVF4N65CF, SVF4N65CMJ, SVF4N65DTR, SVF4N65MJ, SVF4N65RDTR, SVF4N70DTR

Keywords - SVF4N60DTR MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.