SVF6N70K MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF6N70K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO262
SVF6N70K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF6N70K Datasheet (PDF)
svf6n70mjg svf6n70dtr svf6n70k svf6n70mn.pdf
SVF6N70MJG/D/K/N 6A700V N 2SVF6N70MJG/D/K/N N MOS 1 F-CellTM VDMOS 3 1.
svf6n60f svf6n60dtr svf6n60fq.pdf
SVF6N60F/D/FQ 6A600V N 2SVF6N60F/D/FQ N MOS F-CellTM VDMOS 11 3 TO-252-2L3
svf6n80dtr svf6n80k svf6n80mj.pdf
SVF6N80D(K) 6A800V N 2SVF6N80D(K)(MJ) N MOS F-CellTM VDMOS 1 3
svf6n60mj svf6n60f svf6n60d.pdf
SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RF1S45N06SM
History: RF1S45N06SM
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918