All MOSFET. SVG086R0NS Datasheet

 

SVG086R0NS Datasheet and Replacement


   Type Designator: SVG086R0NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263
 

 SVG086R0NS substitution

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SVG086R0NS Datasheet (PDF)

 ..1. Size:434K  silan
 svg086r0nt svg086r0ns svg086r0nstr svg086r0ndtr svg086r0nl5tr.pdf pdf_icon

SVG086R0NS

SVG086R0NT(S)(D)(L5) 120A80V N 2S D1 8SVG086R0NT(S)(D)(L5) N MOS S 2 7 D1 LVMOS DS 3 6G 4 5 D 3

 7.1. Size:328K  silan
 svg086r5nt.pdf pdf_icon

SVG086R0NS

SVG086R5NT 120A85V N 2SVG086R5NT N MOS LVMOS 1 3

 9.1. Size:481K  silan
 svg085r9nt.pdf pdf_icon

SVG086R0NS

SVG085R9NT 100A80V N 2SVG085R9NT N MOS LVMOS 1 3

 9.2. Size:330K  silan
 svg087r0nt.pdf pdf_icon

SVG086R0NS

SVG087R0NT 95A80V N 2SVG087R0NT N MOS LVMOS 1 3

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Datasheet: SVG083R4NP7 , SVG083R4NS , SVG083R4NSTR , SVG083R4NT , SVG083R6NAL5 , SVG085R9NT , SVG086R0NDTR , SVG086R0NL5TR , 2N60 , SVG086R0NSTR , SVG086R0NT , SVG086R5NT , SVG087R0NT , SVG094R1NKL , SVG094R1NS , SVG094R1NSTR , SVG094R1NT .

History: UPA1870BGR | OSG60R2K8DF

Keywords - SVG086R0NS MOSFET datasheet

 SVG086R0NS cross reference
 SVG086R0NS equivalent finder
 SVG086R0NS lookup
 SVG086R0NS substitution
 SVG086R0NS replacement

 

 
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