SVG10120NSA Datasheet. Specs and Replacement

Type Designator: SVG10120NSA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 348 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP8

SVG10120NSA substitution

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SVG10120NSA datasheet

 ..1. Size:312K  silan
svg10120nsa.pdf pdf_icon

SVG10120NSA

SVG10120NSA 16A 100V N 5 6 7 8 4. SVG10120NSA N MOS 1 2 3. 5 6 7 8. LVMOS 4 ... See More ⇒

 5.1. Size:395K  silan
svg10120nat svg10120nadtr.pdf pdf_icon

SVG10120NSA

SVG10120NAT(D) 80A 100V N 2 SVG10120NAT(D) N MOS LVMOS 1 3 ... See More ⇒

 9.1. Size:276K  1
svg104r5nt svg104r5ns.pdf pdf_icon

SVG10120NSA

Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2 field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1 especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.... See More ⇒

 9.2. Size:317K  silan
svg108r5nad.pdf pdf_icon

SVG10120NSA

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Detailed specifications: SVG094R1NS, SVG094R1NSTR, SVG094R1NT, SVG096R5NS, SVG096R5NKL, SVG096R5NT, SVG10120NADTR, SVG10120NAT, IRFZ48N, SVG103R0NKL, SVG103R0NP7, SVG103R0NS, SVG103R0NS6TR, SVG103R0NSTR, SVG103R0NT, SVG103R9NS, SVG104R0NS

Keywords - SVG10120NSA MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.