SVG10120NSA Datasheet and Replacement
Type Designator: SVG10120NSA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 348 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
SVG10120NSA substitution
SVG10120NSA Datasheet (PDF)
svg10120nsa.pdf
SVG10120NSA 16A100V N 5 6 7 8 4. SVG10120NSA N MOS 123. 5678. LVMOS 4
svg10120nat svg10120nadtr.pdf
SVG10120NAT(D) 80A100V N 2SVG10120NAT(D) N MOS LVMOS 1 3
svg104r5nt svg104r5ns.pdf
SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
Datasheet: SVG094R1NS , SVG094R1NSTR , SVG094R1NT , SVG096R5NS , SVG096R5NKL , SVG096R5NT , SVG10120NADTR , SVG10120NAT , RU7088R , SVG103R0NKL , SVG103R0NP7 , SVG103R0NS , SVG103R0NS6TR , SVG103R0NSTR , SVG103R0NT , SVG103R9NS , SVG104R0NS .
Keywords - SVG10120NSA MOSFET datasheet
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History: STP6625 | SVF840MJ
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