SVG103R0NP7 Datasheet. Specs and Replacement
Type Designator: SVG103R0NP7 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 1264 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO247
SVG103R0NP7 substitution
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SVG103R0NP7 datasheet
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Detailed specifications: SVG094R1NT, SVG096R5NS, SVG096R5NKL, SVG096R5NT, SVG10120NADTR, SVG10120NAT, SVG10120NSA, SVG103R0NKL, IRF830, SVG103R0NS, SVG103R0NS6TR, SVG103R0NSTR, SVG103R0NT, SVG103R9NS, SVG104R0NS, SVG104R0NSTR, SVG104R0NT
Keywords - SVG103R0NP7 MOSFET specs
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