SVG103R0NSTR Datasheet and Replacement
Type Designator: SVG103R0NSTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 223 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 1264 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO263
SVG103R0NSTR substitution
SVG103R0NSTR Datasheet (PDF)
svg103r0nt svg103r0ns svg103r0nstr svg103r0nkl svg103r0ns6tr svg103r0np7.pdf
SVG103R0NT(S)(KL)(S6)(P7) 180A100V N 42SVG103R0NT(S)(KL)(S6)(P7) N MOS 1 1 LVMOS 3 2,3,5,6,71. 2.
svg104r5nt svg104r5ns.pdf
SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
svg10120nsa.pdf
SVG10120NSA 16A100V N 5 6 7 8 4. SVG10120NSA N MOS 123. 5678. LVMOS 4
Datasheet: SVG096R5NT , SVG10120NADTR , SVG10120NAT , SVG10120NSA , SVG103R0NKL , SVG103R0NP7 , SVG103R0NS , SVG103R0NS6TR , 8N60 , SVG103R0NT , SVG103R9NS , SVG104R0NS , SVG104R0NSTR , SVG104R0NT , SVG104R2NT , SVG104R5NF , SVG104R5NKL .
History: HGP045N15S
Keywords - SVG103R0NSTR MOSFET datasheet
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SVG103R0NSTR replacement
History: HGP045N15S
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