SVG105R4NSTR Datasheet and Replacement
Type Designator: SVG105R4NSTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 652 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO263
SVG105R4NSTR substitution
SVG105R4NSTR Datasheet (PDF)
svg105r4nt svg105r4ns svg105r4nstr svg105r4nkl.pdf
SVG105R4NT(S)(KL) 120A100V N 2SVG105R4NT(S)(KL) N MOS LVMOS 1
svg104r5nt svg104r5ns.pdf
SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
svg10120nsa.pdf
SVG10120NSA 16A100V N 5 6 7 8 4. SVG10120NSA N MOS 123. 5678. LVMOS 4
Datasheet: SVG104R2NT , SVG104R5NF , SVG104R5NKL , SVG104R5NS6 , SVG104R5NS6TR , SVG104R5NSTR , SVG105R4NKL , SVG105R4NS , IRF740 , SVG105R4NT , SVG105R5NT , SVG108R5NAD , SVG108R5NAL5 , SVG108R5NAM , SVG108R5NAMJ , SVG108R5NAMQ , SVG108R5NAT .
History: AP4P016P | AOWF25S65 | FQB2N90TM | TPCA8027-H | OSG60R380AF | SSF2610E | MTP3055V
Keywords - SVG105R4NSTR MOSFET datasheet
SVG105R4NSTR cross reference
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SVG105R4NSTR replacement
History: AP4P016P | AOWF25S65 | FQB2N90TM | TPCA8027-H | OSG60R380AF | SSF2610E | MTP3055V
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