SVG105R4NSTR Datasheet and Replacement
Type Designator: SVG105R4NSTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 652 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO263
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SVG105R4NSTR Datasheet (PDF)
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SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: KNP3508A | 2SJ50 | BSP130 | GSM4936S | 2SK3389 | AFN2318 | ATM2N65TE
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History: KNP3508A | 2SJ50 | BSP130 | GSM4936S | 2SK3389 | AFN2318 | ATM2N65TE
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