SVG105R4NSTR Datasheet: MOSFET, N-Ch, 100V, 120A. Full specification with pinout and replacement list

SVG105R4NSTR Datasheet. Specs and Replacement

Type Designator: SVG105R4NSTR 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 652 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: TO263

SVG105R4NSTR substitution

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SVG105R4NSTR datasheet

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SVG105R4NT(S)(KL) 120A 100V N 2 SVG105R4NT(S)(KL) N MOS LVMOS 1 ... See More ⇒

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Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2 field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1 especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.... See More ⇒

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