SVGP157R5NP7 Datasheet. Specs and Replacement
Type Designator: SVGP157R5NP7 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 689 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO247
SVGP157R5NP7 substitution
- MOSFET ⓘ Cross-Reference Search
SVGP157R5NP7 datasheet
svgp157r2ns.pdf
SVGP157R2NS 100A 150V N 2 SVGP157R2NS N MOS LVMOS 1 3 ... See More ⇒
Detailed specifications: SVGP104R5NSTR, SVGP104R5NT, SVGP107R0NL5, SVGP15110NL5, SVGP15140NL5A, SVGP15161PL3A, SVGP15751PL3, SVGP157R2NS, IRF4905, SVGP157R5NT, SVGP159R3NL5ATR, SVGP159R3NL5TR, SVGP20110NP7, SVGP20110NS, SVGP20110NSTR, SVGP20110NT, SVGP20500NL5
Keywords - SVGP157R5NP7 MOSFET specs
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