SVS11N60DD2TR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVS11N60DD2TR
Marking Code: 11N60DD2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 38 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO252
SVS11N60DD2TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVS11N60DD2TR Datasheet (PDF)
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svs11n65fjd2.pdf
SVS11N65FJD2_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65FJD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore,
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