SVS11N60FJD2 Datasheet. Specs and Replacement
Type Designator: SVS11N60FJD2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220F
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SVS11N60FJD2 substitution
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SVS11N60FJD2 datasheet
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SVS11N65D(F)(S)(FJ)D2 11A 650V MOS 2 SVS11N65D(F)(S)(FJ)D2 N MOSFET MOS 1 1 3 SVS11N65D(F)(S)(FJ)D2 ... See More ⇒
svs11n65fjd2.pdf
SVS11N65FJD2_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65FJD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore,... See More ⇒
Detailed specifications: SVGQ041R7NL5V-2HSTR, SVGQ042R8NL5V-2HSTR, SVGQ047R6NL5V-2HS, SVGQ06100ND, SVGQ06130PD, SVGQ109R5NAD, SVS11N60DD2TR, SVS11N60FD2, NCEP15T14, SVS11N60KD2, SVS11N60SD2, SVS11N60SD2TR, SVS11N60TD2, SVS11N65DD2TR, SVS11N65F, SVS11N65FD2, SVS11N65K
Keywords - SVS11N60FJD2 MOSFET specs
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