SVS11N60KD2 Datasheet. Specs and Replacement
Type Designator: SVS11N60KD2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO262
📄📄 Copy
SVS11N60KD2 substitution
- MOSFET ⓘ Cross-Reference Search
SVS11N60KD2 datasheet
svs11n60dd2tr svs11n60fd2 svs11n60sd2 svs11n60sd2tr svs11n60fjd2 svs11n60td2 svs11n60kd2.pdf
... See More ⇒
svs11n65dd2tr svs11n65fd2 svs11n65sd2 svs11n65sd2tr svs11n65fjd2.pdf
SVS11N65D(F)(S)(FJ)D2 11A 650V MOS 2 SVS11N65D(F)(S)(FJ)D2 N MOSFET MOS 1 1 3 SVS11N65D(F)(S)(FJ)D2 ... See More ⇒
svs11n65fjd2.pdf
SVS11N65FJD2_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65FJD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore,... See More ⇒
Detailed specifications: SVGQ042R8NL5V-2HSTR, SVGQ047R6NL5V-2HS, SVGQ06100ND, SVGQ06130PD, SVGQ109R5NAD, SVS11N60DD2TR, SVS11N60FD2, SVS11N60FJD2, AON7506, SVS11N60SD2, SVS11N60SD2TR, SVS11N60TD2, SVS11N65DD2TR, SVS11N65F, SVS11N65FD2, SVS11N65K, SVS11N65S
Keywords - SVS11N60KD2 MOSFET specs
SVS11N60KD2 cross reference
SVS11N60KD2 equivalent finder
SVS11N60KD2 pdf lookup
SVS11N60KD2 substitution
SVS11N60KD2 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
