SVS11N65SD2 Datasheet. Specs and Replacement

Type Designator: SVS11N65SD2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO263

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SVS11N65SD2 substitution

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SVS11N65SD2 datasheet

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SVS11N65SD2

SVS11N65D(F)(S)(FJ)D2 11A 650V MOS 2 SVS11N65D(F)(S)(FJ)D2 N MOSFET MOS 1 1 3 SVS11N65D(F)(S)(FJ)D2 ... See More ⇒

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SVS11N65SD2

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SVS11N65SD2

SVS11N65FJD2_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65FJD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore,... See More ⇒

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SVS11N65SD2

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Detailed specifications: SVS11N60SD2, SVS11N60SD2TR, SVS11N60TD2, SVS11N65DD2TR, SVS11N65F, SVS11N65FD2, SVS11N65K, SVS11N65S, 2SK3568, SVS11N65SD2TR, SVS11N65STR, SVS11N65T, SVS11N70DD2TR, SVS11N70FD2, SVS11N70FJHD2, SVS11N70MJD2, SVS11N70SD2

Keywords - SVS11N65SD2 MOSFET specs

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