SVS11N65STR Datasheet: MOSFET, N-Ch, 650V, 11A. Full specification with pinout and replacement list

SVS11N65STR Datasheet. Specs and Replacement

Type Designator: SVS11N65STR 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 82 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: TO263

📄📄 Copy

SVS11N65STR substitution

- MOSFET ⓘ Cross-Reference Search

SVS11N65STR datasheet

..1. Size:382K silan
svs11n65t svs11n65f svs11n65k svs11n65s svs11n65str.pdf pdf_icon

... See More ⇒

5.1. Size:447K silan
svs11n65dd2tr svs11n65fd2 svs11n65sd2 svs11n65sd2tr svs11n65fjd2.pdf pdf_icon

SVS11N65D(F)(S)(FJ)D2 11A 650V MOS 2 SVS11N65D(F)(S)(FJ)D2 N MOSFET MOS 1 1 3 SVS11N65D(F)(S)(FJ)D2 ... See More ⇒

6.1. Size:229K silan
svs11n65fjd2.pdf pdf_icon

SVS11N65FJD2_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65FJD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore,... See More ⇒

7.1. Size:493K silan
svs11n60dd2tr svs11n60fd2 svs11n60sd2 svs11n60sd2tr svs11n60fjd2 svs11n60td2 svs11n60kd2.pdf pdf_icon