All MOSFET. SVS5N65FD2 Datasheet

 

SVS5N65FD2 Datasheet and Replacement


   Type Designator: SVS5N65FD2
   Marking Code: SVS5N65FD2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.96 Ohm
   Package: TO252
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SVS5N65FD2 Datasheet (PDF)

 ..1. Size:453K  silan
 svs5n65fd2 svs5n65dd2tr svs5n65fjhd2.pdf pdf_icon

SVS5N65FD2

SVS5N65F(D)(FJH)D2 5A, 650V MOS 2SVS5N65F(D)(FJH)D2 N MOSFET MOS 1 1233TO-220FJH-3LSVS5N65F(D)(FJH)D2

 9.1. Size:465K  silan
 svs5n70dtr svs5n70mj svs5n70mn svs5n70f svs5n70mu.pdf pdf_icon

SVS5N65FD2

SVS5N70D(MJ)(MN)(F)(MU) 5A700VMOS 2SVS5N70D(MJ)(MN)(F)(MU) N MOSFET MOS 11 233SVS5N70D(MJ)(MN)(F)(MU)

 9.2. Size:481K  silan
 svs5n70.pdf pdf_icon

SVS5N65FD2

SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

 9.3. Size:414K  silan
 svs5n70fd2 svs5n70dd2tr svs5n70mjd2 svs5n70kd2.pdf pdf_icon

SVS5N65FD2

SVS5N70F(D)(MJ)(K)D2 5A700V MOS 2 123SVS5N70F(D)(MJ)(K)D2 N MOSFET TO-251J-3L1 MOS 3SVS5N70F(D)(MJ)(K)D2

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History: WSD90P06DN56 | BS170F | STK630F | HM6N70F | SVS70R420FE3

Keywords - SVS5N65FD2 MOSFET datasheet

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