SVS60R360FJHE3 Datasheet. Specs and Replacement

Type Designator: SVS60R360FJHE3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220F

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SVS60R360FJHE3 substitution

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SVS60R360FJHE3 datasheet

 ..1. Size:537K  silan
 svs60r360fjhe3 svs60r360fjde3 svs60r360de3tr svs60r360l8ae3tr.pdf pdf_icon

SVS60R360FJHE3

SVS60R360FJH(FJD)(D)(L8A)E3 11A 600V MOS 2 SVS60R360FJH(FJD)(D)(L8A)E3 N MOSFET MOS 1 SVS60R360FJH(FJD)(D)(L8A)E3 ... See More ⇒

 8.1. Size:727K  silan
 svs60r190fjdd4 svs60r190fd4 svs60r190dd4tr svs60r190l8ad4tr svs60r190td4 svs60r190sd4 svs60r190sd4tr svs60r190kd4.pdf pdf_icon

SVS60R360FJHE3

SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 20A, 600V MOS 2 SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 N 12 3 1 TO-220FJD-3L MOSFET MOS 3 1... See More ⇒

Detailed specifications: SVS60R190FJDD4, SVS60R190KD4, SVS60R190L8AD4TR, SVS60R190SD4, SVS60R190SD4TR, SVS60R190TD4, SVS60R360DE3TR, SVS60R360FJDE3, AO4468, SVS60R360L8AE3TR, SVS65R240DD4TR, SVS65R240FD4, SVS65R240FJDD4, SVS65R240L8AD4TR, SVS65R240TD4, SVS65R280DD4TR, SVS65R280FD4

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