SVS65R240DD4TR Datasheet and Replacement
Type Designator: SVS65R240DD4TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 51 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO252
SVS65R240DD4TR substitution
SVS65R240DD4TR Datasheet (PDF)
svs65r240fjdd4 svs65r240dd4tr svs65r240l8ad4tr svs65r240td4 svs65r240fd4.pdf
SVS65R240FJD(F)(D)(L8A)(T)D4 20A, 650V MOS 2 SVS65R240FJD(F)(D)(L8A)(T)D4 N 1MOSFET MOS 123TO-220FJD-3L 3SVS65R240FJD(F)
svs65r280fjdd4 svs65r280dd4tr svs65r280fd4 svs65r280td4 svs65r280sd4 svs65r280sd4tr.pdf
SVS65R280FJD(F)(D)(T)(S)D4 14A, 650V MOS 2SVS65R280FJD(F)(D)(T)(S)D4 N MOSFET MOS 1 123SVS65R280FJD(F)(D)(T)(S)D4
svs65r380fjd4 svs65r380fjdd4 svs65r380fd4 svs65r380dd4tr.pdf
SVS65R380FJ(FJD)(F)(D)D4 11A, 650V MOS 2SVS65R380FJ(FJD)(F)(D)D4 N MOSFET MOS 1 SVS65R380FJ(FJD)(F)(D)D4
svs65r400de3tr svs65r400fjhe3 svs65r400fjde3 svs65r400l8ae3tr.pdf
SVS65R400D(FJH)(FJD)(L8A)E3 11A, 650V MOS 2SVS65R400D(FJH)(FJD)(L8A)E3 N MOSFET MOS 1 SVS65R400D(FJH)(FJD)(L8A)E3
Datasheet: SVS60R190L8AD4TR , SVS60R190SD4 , SVS60R190SD4TR , SVS60R190TD4 , SVS60R360DE3TR , SVS60R360FJDE3 , SVS60R360FJHE3 , SVS60R360L8AE3TR , IRFZ44N , SVS65R240FD4 , SVS65R240FJDD4 , SVS65R240L8AD4TR , SVS65R240TD4 , SVS65R280DD4TR , SVS65R280FD4 , SVS65R280FJDD4 , SVS65R280SD4 .
History: IPD25DP06NM | QM2710D
Keywords - SVS65R240DD4TR MOSFET datasheet
SVS65R240DD4TR cross reference
SVS65R240DD4TR equivalent finder
SVS65R240DD4TR lookup
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SVS65R240DD4TR replacement
History: IPD25DP06NM | QM2710D
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