All MOSFET. FDP2710 Datasheet

 

FDP2710 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDP2710

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 260 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 78 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0425 Ohm

Package: TO220

FDP2710 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP2710 Datasheet (PDF)

1.1. fdp2710.pdf Size:640K _fairchild_semi

FDP2710
FDP2710

November 2007 FDP2710 tm 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m? @VGS = 10 V ductors advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching performance.

1.2. fdp2710 f085.pdf Size:453K _fairchild_semi

FDP2710
FDP2710

February 2010 FDP2710_F085 N-Channel PowerTrench® MOSFET 250V, 50A, 47mΩ Features General Description This N-Channel MOSFET is produced using Fairchil Semi- Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A conductor’s advanced PowerTrench process that has been Typ Qg(TOT) = 78nC at VGS = 10V especially tailored to minimize the on-state resistance and yet maintain superior switc

 

Datasheet: STM4435 , FDP2532 , FDP2552 , FDP2572 , FDP2614 , STM4433A , FDP26N40 , STM4432 , IRFZ44V , FDP2710_F085 , FDP33N25 , FDP3651U , STM4410A , FDP3672 , FDP3682 , STM301N , FDP42AN15A0 .

 

 
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