SVS70R900MJE3 Datasheet. Specs and Replacement

Type Designator: SVS70R900MJE3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO251

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SVS70R900MJE3 substitution

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SVS70R900MJE3 datasheet

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SVS70R900MJE3

SVS70R900S(D)(MJ)E3 5A, 700V MOS 2 SVS70R900S(D)(MJ)E3 N MOSFET MOS 1 SVS70R900S(D)(MJ)E3 / ... See More ⇒

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SVS70R900MJE3

SVS70R360S(F)(FJD)(D)E3 13A, 700V MOS 2 SVS70R360S(F)(FJD)(D)E3 N MOSFET MOS 1 SVS70R360S(F)(FJD)(D)E3 ... See More ⇒

 8.2. Size:487K  silan
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SVS70R900MJE3

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SVS70R900MJE3

SVS70R600D(S)(MJ)(F)(FJD)(FJH)E3 7A 700V MOS 2 SVS70R600D(S)(MJ)(F)(FJD)(FJH)E3 N 1 2 3 MOSFET MOS 1 TO-220F-3L SVS70R600D(S)(MJ)(F... See More ⇒

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Detailed specifications: SVS70R600DE3TR, SVS70R600FE3, SVS70R600FJDE3, SVS70R600FJHE3, SVS70R600MJE3, SVS70R600SE3, SVS70R600SE3TR, SVS70R900DE3TR, IRFP260, SVS70R900SE3, SVS70R900SE3TR, SVS7N60DD2TR, SVS7N60FD2, SVS7N60FJD2, SVS7N65D, SVS7N65DD2TR, SVS7N65DTR

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