SVS80R280P7E3 Datasheet. Specs and Replacement

Type Designator: SVS80R280P7E3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO247

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SVS80R280P7E3 substitution

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SVS80R280P7E3 datasheet

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SVS80R280P7E3

SVS80R430F(FJH)(D)(FJD)(L8A)E3 12A 800V MOS 2 SVS80R430F(FJH)(D)(FJD)(L8A)E3 N 1 MOSFET MOS 1 2 3 TO-220FJH-3L SVS80R430F(F... See More ⇒

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Detailed specifications: SVS7N65SD2TR, SVS7N70D, SVS7N70DD2TR, SVS7N70FD2, SVS7N70MJD2, SVS7N70SD2, SVS80R280FE3, SVS80R280FJDE3, IRF1407, SVS80R280SE3, SVS80R280SE3TR, SVS80R430DE3TR, SVS80R430FE3, SVS80R430FJDE3, SVS80R430FJHE3, SVS80R430L8AE3TR, SVS80R800DE3TR

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