SVS80R430FJDE3 Specs and Replacement
Type Designator: SVS80R430FJDE3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 37 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: TO220F
SVS80R430FJDE3 substitution
SVS80R430FJDE3 datasheet
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SVS80R430F(FJH)(D)(FJD)(L8A)E3 12A 800V MOS 2 SVS80R430F(FJH)(D)(FJD)(L8A)E3 N 1 MOSFET MOS 1 2 3 TO-220FJH-3L SVS80R430F(F... See More ⇒
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Detailed specifications: SVS7N70SD2 , SVS80R280FE3 , SVS80R280FJDE3 , SVS80R280P7E3 , SVS80R280SE3 , SVS80R280SE3TR , SVS80R430DE3TR , SVS80R430FE3 , SI2302 , SVS80R430FJHE3 , SVS80R430L8AE3TR , SVS80R800DE3TR , SVS80R800FE3 , SVS80R800FJHE3 , SVS80R900DE3TR , SVS80R900FE3 , SVS80R900FJDE3 .
History: JMTG3008D
Keywords - SVS80R430FJDE3 MOSFET specs
SVS80R430FJDE3 cross reference
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SVS80R430FJDE3 substitution
SVS80R430FJDE3 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: JMTG3008D
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