All MOSFET. SVS80R430L8AE3TR Datasheet

 

SVS80R430L8AE3TR MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVS80R430L8AE3TR
   Marking Code: 80R430E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 119 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: DFN4-8X8

 SVS80R430L8AE3TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVS80R430L8AE3TR Datasheet (PDF)

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SVS80R430L8AE3TR SVS80R430L8AE3TR

SVS80R430F(FJH)(D)(FJD)(L8A)E3 12A800V MOS 2SVS80R430F(FJH)(D)(FJD)(L8A)E3 N 1MOSFET MOS 1 23TO-220FJH-3L SVS80R430F(F

 8.1. Size:558K  silan
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SVS80R430L8AE3TR SVS80R430L8AE3TR

SVS80R800FJH(D)(F)E3 7A, 800V MOS 2SVS80R800FJH(D)(F)E3 N MOSFET MOS 1 SVS80R800FJH(D)(F)E3 /

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SVS80R430L8AE3TR SVS80R430L8AE3TR

SVS80R900F(D)(FJD)E3 6A800V MOS 2SVS80R900F(D)(FJD)E3 N MOSFET MOS 1 SVS80R900F(D)(FJD)E3 /

 8.3. Size:505K  silan
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SVS80R430L8AE3TR SVS80R430L8AE3TR

SVS80R280F(FJD)(S)(P7)E3 17A800V MOS 2SVS80R280F(FJD)(S)(P7)E3 N MOSFET1 MOS 3TO-247-3LSVS80R280F(FJD)(S)(P7)E3

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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