SVS80R430L8AE3TR Datasheet. Specs and Replacement

Type Designator: SVS80R430L8AE3TR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 119 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: DFN4-8X8

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SVS80R430L8AE3TR substitution

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SVS80R430L8AE3TR datasheet

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SVS80R430L8AE3TR

SVS80R430F(FJH)(D)(FJD)(L8A)E3 12A 800V MOS 2 SVS80R430F(FJH)(D)(FJD)(L8A)E3 N 1 MOSFET MOS 1 2 3 TO-220FJH-3L SVS80R430F(F... See More ⇒

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Detailed specifications: SVS80R280FJDE3, SVS80R280P7E3, SVS80R280SE3, SVS80R280SE3TR, SVS80R430DE3TR, SVS80R430FE3, SVS80R430FJDE3, SVS80R430FJHE3, 18N50, SVS80R800DE3TR, SVS80R800FE3, SVS80R800FJHE3, SVS80R900DE3TR, SVS80R900FE3, SVS80R900FJDE3, SVSP11N60DD2TR, SVSP11N60FD2

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.