SVSP65R110LHD4TR Specs and Replacement
Type Designator: SVSP65R110LHD4TR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 83 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TOLL-8L
SVSP65R110LHD4TR substitution
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SVSP65R110LHD4TR datasheet
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SVSP65R110P7(T)(S)(FJD)(L)HD4 35A 650V MOS Tab 2 SVSP65R110P7(T)(S)(FJD)(L)HD4 N 1 pin1 MOSFET MOS 3 Pin2-8 Pin1. Tab. 1.... See More ⇒
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Detailed specifications: SVSP60R033P7HD4, SVSP60R090FJDHD4, SVSP60R090LHD4TR, SVSP60R090P7HD4, SVSP65R041P7HD4, SVSP65R050P7HD4, SVSP65R080P7HD4, SVSP65R110FJDHD4, 7N65, SVSP65R110P7HD4, SVSP65R110SHD4, SVSP65R110SHD4TR, SVSP65R110THD4, SVSP7N70DD2TR, SVSP7N70FD2, SVSP7N70FJDD2, SVSP7N70SD2
Keywords - SVSP65R110LHD4TR MOSFET specs
SVSP65R110LHD4TR cross reference
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SVSP65R110LHD4TR substitution
SVSP65R110LHD4TR replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AOD9N52
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